s7033/s7034 series are families of fft-ccd image sensors specifically designed for low-light-level detection in scientific appl ications. s7033/s7034 series feature large full-well capacity in horizontal ccd register. by using the binning operation, s7033/s7034 ser ies can be used as a linear image sensor having a long height. this makes s7033/s7034 series ideally suited for use in spectrophotometry. the b inning operation offers significant improvement in s/n and signal processing speed compared with conventional methods by which signals are digit ally added by an external circuit. s7033/s7034 series have an effective pixel size of 24 24 m and are available in image areas ranging from 12.288 (h) 2.928 (v) mm 2 (s7033-0907, s7034-0907s) up to a large image area of 24.576 (h) 2.928 (v) mm 2 (s7033-1007, S7034-1007S). either one-stage or two-stage thermoelectric cooler is built into the package (s7034/s7035 series). at room temperature operati on, the device can be cooled down to -10 ?c by one-stage cooler and -30 ?c by two-stage cooler respectively without using any other cooling technique. in addition since both the ccd chip and the thermoelectric cooler are hermetically sealed, no dry air is required, thus allowin g easy handling. features l line, pixel binning l greater than 90 % quantum efficiency at peak sensitivity wavelength l wide spectral range l wide dynamic range l mpp operation l built-in thermoelectric cooler applications l fluorescence spectrometer, icp l industrial inspection requiring l semiconductor inspection l dna sequencer l low-light-level detection image sensor ccd area image sensor back-thinned fft-ccd s7033/s7034 series selection guide type no. cooling number of total pixels number of active pixels active area [m m (h) m m (v)] suitable multichannel detector head s7033-0907 532 128 512 122 12.288 2.928 s7033-1007 non-cooled 1044 128 1024 122 24.576 2.928 c7043 s7034-0907s 532 128 512 122 12.288 2.928 S7034-1007S one-stage te-cooled 1044 128 1024 122 24.576 2.928 c7044 note) two-stage te-cooled type (s7035 series) is also available general ratings parameter s7033 series s7034 series pixel size 24 (h) 24 (v) m vertical clock phase 2 phase horizontal clock phase 2 phase output circuit one-stage mosfet source follower package 24 pin ceramic dip (refer to dimensional outlines) built-in cooler - one-stage window * 1 quartz glass sapphire *1: window-less is available upon request. 1
ccd area image sensor s7033/s7034 series electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit signal output frequency fc - - 1 mhz charge transfer efficiency * 2 cte 0.99995 0.99999 - - dc output level * 3 vout 12 15 18 v output impedance * 3 zo - 3 - k ? power consumption * 3 * 4 p-15-mw *2: charge transfer efficiency per pixel, measured at half of the full well capacity. *3: the values depend on the load resistance. (typical, v od =20 v, load resistance=22 k ? ) *4: power consumption of the on-chip amplifier. electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v vertical 150,000 300,000 - full well capacity horizontal fw 1,350,000 2,700,000 - e - ccd node sensitivity sv 0.5 0.6 - v/e - 25 c - 4,000 12,000 dark current * 5 (mpp mode) 0 c ds - 200 600 e - /pixel/s readout noise * 6 nr - 30 - e - rm s line binning 22,500 90,000 - dynamic range * 7 area scanning dr 2,500 10,000 - - photo response non-uniformity * 8 prnu - 3 10 % spectral response range - 200 to 1100 - nm *5: dark current nearly doubles for every 5 to 7 c increase in temperature. *6: operating frequency is 150 khz. *7: dynamic range (dr)=full well/readout noise. *8: measured at the half of the full well capacity output. absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature topr -50 - +30 c storage temperature tstg -50 - +70 c od voltage v od -0.5 - +25 v rd voltage v rd -0.5 - +18 v isv voltage v is v -0.5 - +18 v ish voltage v is h -0.5 - +18 v igv voltage v ig 1v , v ig 2v -10 - +15 v igh voltage v ig 1h , v ig 2h -10 - +15 v sg voltage v sg -10 - +15 v og voltage v og -10 - +15 v rg voltage v rg -10 - +15 v tg voltage v tg -10 - +15 v vertical clock voltage v p1v , v p2v -10 - +15 v horizontal clock voltage v p1h , v p2h -10 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 18 20 22 v reset drain voltage v rd 11.5 12 12.5 v output gate voltage v og 135v substrate voltage v ss - 0 - v test point (vertical input source) v is v -v rd -v test point (horizontal input source) v is h - v rd - v test point (vertical input gate) v ig 1v , v ig 2v -8 0 - v test point (horizontal input gate) v ig 1h , v ig 2h -8 0 - v high v p1vh , v p2vh 468 vertical shift register clock voltage low v p1vl , v p2vl -9 -8 -7 v high v p1hh , v p2hh 4 6 8 horizontal shift register clock voltage low v p1hl , v p2hl -9 -8 -7 v high v sgh 468 summing gate voltage low v sgl -9 -8 -7 v high v rgh 4 6 8 reset gate voltage low v rgl -9 -8 -7 v high v tgh 468 transfer gate voltage low v tgl -9 -8 -7 v 2 fixed pattern noise (peak to peak) signal 100 photo response non-uniformity (prnu) [%]
ccd area image sensor s7033/s7034 series quantum efficiency (%) wavelength (nm) (typ. ta=25 ? c) 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 front-sided front-sided (uv coat) back-thinned *9: spectral response with quartz glass or sapphire are decreased by the transmittance. spectral response (without window) *9 spectral transmittance characteristics of window material kmpdb0058ea 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 20 30 40 50 60 70 80 90 100 (typ. ta=25 ? c) quartz window sapphire window kmpdb0101ea dark current vs. temperature -50 -40 -30 -20 0 -10 10 20 30 temperature ( ? c) 0.1 1 10 100 1000 10000 dark current (e - /pixel/s) (typ.) kmpdb0037eb window material type no. window material s7033 series quartz glass * 10 (option: window-less,) s7034 series sapphire * 11 (option: window-less) s7035 series (two-stage te-cooled type) sapphire * 11 (option: window-less) *10: resin sealing *11: hermetic sealing 3
ccd area image sensor s7033/s7034 series device structure (conceptual drawing of top view) 23 22 21 2 0 14 15 24 1 2 12 11 89 3 4 5 2 bevel signal out 2 n 4 blank 4 blank v=122 h=512, 1024 4 bevel thinning thinning 1 23 45 2 3 4 5 v h 6 bevel 6 bevel 13 10 2 n signal out kmpdc0076ea integration period (shutter must be open) vertical binning period (shutter must be closed) p1v p2v, tg p1h p2h, sg readout period (shutter must be closed) 3..126 127 128 122 + 6 (bevel) tpwv to v r tpwh, tpws tpwr 123 531 1043 532 1044 4..530 4..1042 : s703 * -0907 : s703 * -1007 12 d19 d2 d1 d20 d3..d10, s1..s1024, d11..d18 rg os s1..s512 : s703 * -0907 : s703 * -1007 timing chart kmpdc0128ea parameter symbol remark min. typ. max. unit pulse width tpwv 6 * 13 - - s p1v, p2v, tg rise and fall time tprv, tpfv * 12 200 - - ns pulse width tpwh 500 - - ns rise and fall time tprh, tpfh 10 - - ns p1h, p2h duty ratio - * 12 - 50 - % pulse width tpws 500 - - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - - - 50 - % pulse width tpwr 100 - - ns rg rise and fall time tprr, tpfr - 5 - - ns tg ? p1h overlap time tovr - 3 - - s *12: symmetrical pulses should be overlapped at 50 % of maximum amplitude. *13: in case of s7033-1007, S7034-1007S 4 line binning
ccd area image sensor s7033/s7034 series integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view 4..127 128 122 + 6 (bevel) tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d10, s1..s1024, d11..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 s1..s512 : s703 * -0907 : s703 * -1007 kmpdc0129ea integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view 4..127 128 122 + 6 (bevel) tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d10, s1..s1024, d11..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 s1..s512 : s703 * -0907 : s703 * -1007 kmpdc0130ea parameter symbol remark min. typ. max. unit pulse width tpwv 6 * 15 - - s p1v, p2v, tg rise and fall time tprv, tpfv * 14 200 - - ns pulse width tpwh 500 - - ns rise and fall time tprh, pfh 10 - - ns p1h, p2h duty ratio - * 14 - 50 - % pulse width tpws 500 - - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - - - 50 - % pulse width tpwr 100 - - ns rg rise and fall time tprr, tpfr - 5 - - ns tg ? p1h overlap time tovr - 3 - - s *14: symmetrical pulses should be overlapped at 50 % of maximum amplitude. *15: in case of s7033-1007, S7034-1007S area scanning 1: low dark current mode area scanning 2: large full well mode 5
ccd area image sensor s7033/s7034 series dimensional outlines (unit: mm) kmpda0080eb s7033-0907 s7033-1007 window 16.3 8.2 34.0 2.54 22.9 22.4 a active area 12.288 s7033-0907: a=2.928 4.4 4.8 2.4 3.8 photosensitive surface 1st pin indication pad 3.0 (24 ) 0.5 kmpda0081eb window 28.6 22.9 22.4 active area 24.576 b 8.2 44.0 2.54 s7033-1007: b=2.928 3.0 photosensitive surface 4.4 2.4 4.8 3.8 1st pin indication pad (24 ) 0.5 kmpda0082ec s7034-0907s S7034-1007S kmpda0083ec window 16.3 8.2 34.0 50.0 2.54 22.9 19.0 4.0 42.0 22.4 a 7.3 1.0 7.7 6.7 4.8 active area 12.288 photosensitive surface 1st pin indication pad 3.0 te-cooler s7034-0907s: a=2.928 (24 ) 0.5 (24 ) 0.5 7.3 1.0 3.0 6.7 4.8 photosensitive surface 7.7 1st pin indication pad b 4.0 19.0 22.4 22.9 44.0 52.0 60.0 2.54 window 28.6 active area 24.576 8.2 S7034-1007S: b=2.928 te-cooler parameter symbol remark min. typ. max. unit pulse width tpwv 6 * 17 - - s p1v, p2v, tg rise and fall time tprv, tpfv * 16 200 - - ns pulse width tpwh 500 - - ns rise and fall time tprh, tpfh 10 - - ns p1h, p2h duty ratio - * 16 - 50 - % pulse width tpws 500 - - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - - - 50 - % pulse width tpwr 100 - - ns rg rise and fall time tprr, tpfr - 5 - - ns tg - p1h overlap time tovr - 3 - - s *16: symmetrical pulses should be overlapped at 50 % of maximum amplitude. *17: in case of s7033-1007, S7034-1007S 6
ccd area image sensor s7033/s7034 series pin connections s7033 series s7034 series pin no. symbol function symbol function remark (standard operation) 1 rd reset drain rd reset drain +12 v 2 os output transistor source os output transistor source r l =10 k to 100 k ? 3 od output transistor drain od output transistor drain +20 v 4 og output gate og output gate +3 v 5 sg summing gate sg summing gate same pulse as p2h 6 - - 7- - 8 p2h ccd horizontal register clock-2 p2h ccd horizontal register clock-2 9 p1h ccd horizontal register clock-1 p1h ccd horizontal register clock-1 10 ig2h test point (horizontal input gate-2) ig2h test point (horizontal input gate-2) 0 v 11 ig1h test point (horizontal input gate-1) ig1h test point (horizontal input gate-1) 0 v 12 ish test point (horizontal input source) ish test point (horizontal input source) connect to rd 13 tg * 18 transfer gate tg * 15 transfer gate same pulse as p2v 14 p2v ccd vertical register clock-2 p2v ccd vertical register clock-2 15 p1v ccd vertical register clock-1 p1v ccd vertical register clock-1 16 - th1 thermistor 17 - th2 thermistor 18 - p- te-cooler- 19 - p+ te-cooler+ 20 ss substrate (gnd) ss substrate (gnd) gnd 21 isv test point (vertical input source) isv test point (vertical input source) connect to rd 22 ig2v test point (vertical input gate-2) ig2v test point (vertical input gate-2) 0 v 23 ig1v test point (vertical input gate-1) ig1v test point (vertical input gate-1) 0 v 24 rg reset gate rg reset gate *18: isolation gate between vertical register and horizontal register. in standard operation, tg should be applied the same pulse as p2v. specifications of built-in te-cooler (typ.) parameter symbol condition s7034-0907s S7034-1007S unit internal resistance rint ta=25 c 2.5 1.2 ? maximum current * 19 imax tc * 20 =th * 21 =25 c 1.5 3.0 a maximum voltage vmax tc * 20 =th * 21 =25 c 3.8 3.6 v maximum heat absorption * 22 qmax 3.4 5.1 w maximum temperature of heat radiating side - 70 70 c *19: maximum current imax: if the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not the damage threshold value. to protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *20: temperature of the cooling side of thermoelectric cooler *21: temperature of the heat radiating side of thermoelectric cooler *22: maximum heat absorption qmax. this is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit. 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 2.0 1.5 1.0 current (a) 0.5 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current kmpdb0178ea kmpdb0179ea s7034-0907s S7034-1007S 7
ccd area image sensor s7033/s7034 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 7 hamamatsu photonics k.k. input symbol value supply voltage v d1 v a1+ v a1- v a2 v d2 vp v f +5 vdc, 200 ma +15 vdc, +100 ma -15 vdc, -100 ma +24 vdc, 30 ma +5 vdc, 30 ma (c7044) +5 vdc, 2.5 a (c7044) +12 vdc, 100 ma (c7044) master start ms hcmos logic compatible master clock mc hcmos logic compatible, 1 mhz features l c7043: for s7033 series c7044: for s7034 series l area scanning or full line-binnng operation l readout frequency: 250 khz l readout noise: 60 e - rms l ? t=50 ? c ( ? t changes by cooling method.) cat. no. kmpd1029e09 oct. 2007 dn multichannel detector head c7043/c7044 precaution for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature incline rate element cooling/heating temperature incline rate should be set at less than 5 k/min. specifications of built-in temperature sensor a chip thermistor is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relati on between the thermistor resistance and absolute temperature is expressed by the following equation. r1 = r2 expb (1 / t1 - 1 / t2) where r1 is the resistance at absolute temperature t1 (k) r2 is the resistance at absolute temperature t2 (k) b is so-called the b constant (k) the characteristics of the thermistor used are as follows. r (298k) = 10 k ? b (298k / 323k) = 3450 k kmpdb0111ea (typ. ta=25 ? c) 10 k ? 220 240 260 temperature (k) resistance 280 300 100 k ? 1 m ? 8
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